Search results for "Neutron effects"

showing 2 items of 2 documents

Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

2020

International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.

Nuclear and High Energy PhysicsMaterials scienceRadiation effectsSilicon carbide[PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex]Stress01 natural sciencesNeutron effectsSilicon carbide (SiC)Stress (mechanics)Semiconductor device modelschemistry.chemical_compoundMOSFETReliability (semiconductor)0103 physical sciencesMOSFETSilicon carbideBreakdown voltageSemiconductor device breakdownSilicon compoundsSingle Event BurnoutNeutronIrradiationElectrical and Electronic EngineeringPower MOSFETPower MOSFETComputingMilieux_MISCELLANEOUSElectric breakdownNeutrons[PHYS]Physics [physics]010308 nuclear & particles physicsbusiness.industryLogic gatesWide band gap semiconductorsSemiconductor device reliability[SPI.TRON]Engineering Sciences [physics]/ElectronicsNuclear Energy and Engineeringchemistry13. Climate actionSingle-event burnout (SEB)Atmospheric neutronsOptoelectronicsbusinessTechnology CAD (electronics)
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Neutron irradiation defects in gallium sulfide: Optical absorption measurements

1997

Gallium sulfide single crystals have been irradiated with different thermal neutron doses. Defects introduced by neutron irradiation turn out to be optically active, giving rise to absorption bands with energies ranging from 1.2 to 3.2 eV. Bands lying in the band-gap exhibit Gaussian shape. Their energies and widths are independent of the irradiation dose, but their intensities are proportional to it. Thermal annealing is completed in two stages, ending at around 500 and 720 K, respectively. Centers responsible for the absorption bands are proposed to be gallium-vacancy-galliuminterstitial complexes in which the distance between the vacancy (acceptor) and the interstitial (donor) determines…

Energy GapInterstitialsMaterials scienceIII-VI SemiconductorsAnnealing (metallurgy)Band gapVacancies (Crystal)Neutron EffectsUNESCO::FÍSICAGeneral Physics and AstronomyGallium Compounds ; III-VI Semiconductors ; Neutron Effects ; Defect Absorption Spectra ; Energy Gap ; Vacancies (Crystal) ; Interstitials ; Annealing ; Visible SpectraMolecular physicsAcceptorNeutron temperatureAnnealingCrystallographyCondensed Matter::Materials ScienceAbsorption bandVisible Spectra:FÍSICA [UNESCO]Vacancy defectGallium CompoundsIrradiationDefect Absorption SpectraNeutron irradiation
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